摘要
提出了新的金属-氧化层-半导体-场效晶体管(MOSFET)器件的小信号等效电路结构,提取了等效电路结构的元件参数值,在器件建模型软件IC-CAP2008下,对等效电路模型和提取的元件参数进行编译,生成了能够应用于射频与微波领域的场效应晶体管的高频小信号器件模型,将生成的器件模型编译到高频仿真软件ADS中,并调用S参数仿真器对器件模型进行S参数仿真,最后对比了仿真结果与测试数据的差异性,对生成的器件模型做出了误差分析,展示了所建小信号模型的良好性能。
A new small signal equivalent topology for MOSFET is proposed,the component parameters of the equivalent topology are extracted,and with IC-CAP2008 the component parameters and the equivalent model are complied,thus generating a small signal model suitable for the microwave and radio frequency,and compiling the high-frequency device model into the simulation software ADS.And with S-parameters simulator,the device model is simulated,the differences between simulated S-parameters are analyzed.The study and analysis indicates that the small signal model is of excellent performance.
出处
《通信技术》
2010年第10期158-160,共3页
Communications Technology
关键词
射频
场效应晶体管
小信号
建模
radio frequency
MOSFET
small signal
modeling
