n型多孔硅的无光照制备方法

Preparation of n-type porous silicon without illumination

以甲醇、双氧水和氢氟酸的混合液为电解质,在无光照条件下,用电化学腐蚀方法制备了n型多孔硅.通过场发式扫描电镜测试表明,由这个简单易行的方法制得的多孔硅,其表面孔洞的尺寸、密度及深度均一,孔洞呈近似矩形状,边缘光滑.随着电化学腐蚀的电流密度与腐蚀时间的乘积的增加,孔洞的尺寸和深度增加.在多孔硅的形成过程中,双氧水有助于在硅片中形成空穴,使腐蚀反应能够顺利进行.

n-Type porous silicon can be prepared from the mixture of methanol,hydrogen peroxide,and hydrofluoric acid with electrochemical etching method without illumination.The pores in the silicon prepared by this simple and efficient method have uniform size,density and depth.The pores are square with very smooth edges.The size and depth of the pores increase with the increasing product value of etching current and time.Hydrogen peroxide helps the formation of hole in silicon and ensures the process of electrochemical etching.