6H-SiC单晶锭边缘的多晶环控制

Limitation in the Thickness of Poly-SiC Ring along the Edge of 6H-SiC Single Crystal Ingot

6H-SiC晶体生长过程中单晶锭边缘形成的多晶环影响单晶体的品质。本研究制定了以改进坩埚系统结构为主、调整线圈与坩埚相对位置为辅的多晶环厚度控制方案,利用自制设备进行了6H-SiC晶体生长验证实验,实验结果显示所生长6H-SiC单晶体不但周边和表面光滑,未有多晶出现,还实现了显著的扩径生长。

The formation of poly-SiC ring along the edge of single-crystal ingots during 6H-SiC crystal growth has a great impact on single crystal quality.The developed scheme which limits the thickness of the poly-SiC ring is to mainly improve the crucible system structure and to supplementally adjust the relative position of the coil and the crucible.The crystal growth experiments were conducted with homemade equipment of SiC crystal growth to demonstrate the scheme.The results of experiment show that the peripheral area and surface of 6H-SiC single crystal grown are smooth without poly-SiC and significant enlargement of SiC single crystal is achieved.