钛铝共掺杂氧化锌和钛掺杂氧化锌透明导电薄膜的制备与性能对比研究

Comparison of Preparation and Performance between Ti-doped ZnO Thin Films and Ti-Al Co-doped ZnO Thin Films

利用直流磁控溅射法,在相同实验条件下成功沉积出了钛掺杂氧化锌(TZO)透明导电薄膜和钛铝共掺杂氧化锌(TAZO)透明导电薄膜,并对两种薄膜的结构、应力和光电性能进行了对比研究。结果表明:两种薄膜均为具有c轴择优取向的六角纤锌矿结构多晶薄膜;TAZO薄膜的导电性能优于TZO薄膜,100 W溅射功率下制备的TZO薄膜的电阻率具有其最小值5.17×10-4Ω.cm,而相同功率下TAZO薄膜的电阻率为3.88×10-4Ω.cm;同时TAZO薄膜的光学性能也优于TZO薄膜,所有TAZO薄膜样品的可见光透过率均大于91%,而TZO薄膜的可见光透过率均大于85%。

Transparent conducting Ti-doped ZnO（TZO） films and Ti-Al co-doped ZnO（TAZO） films with high transparency and relatively low resistivity were successfully prepared on water-cooled glass substrates by a direct current magnetron sputtering at the room temperature.The microstructure,stress,and optic-electrical properties of the prepared films were investigated.The results showed that all the deposited films are polycrystalline with a hexagonal structure and a preferred orientation perpendicular to the substrates along the c-axis.The optical and electrical properties of TAZO thin films are better than that of TZO thin films.When the sputtering power is 100 W,TZO films with the lowest resistivity of 5.17×10^-4 Ω·cm and TAZO films with the resistivity of 3.88×10^-4 Ω·cm are obtained.The visible light transmittance of all TAZO films are above 91%,while the visible light transmittance of all TZO films is only above 85%.