摘要
利用直流磁控溅射法,在相同实验条件下成功沉积出了钛掺杂氧化锌(TZO)透明导电薄膜和钛铝共掺杂氧化锌(TAZO)透明导电薄膜,并对两种薄膜的结构、应力和光电性能进行了对比研究。结果表明:两种薄膜均为具有c轴择优取向的六角纤锌矿结构多晶薄膜;TAZO薄膜的导电性能优于TZO薄膜,100 W溅射功率下制备的TZO薄膜的电阻率具有其最小值5.17×10-4Ω.cm,而相同功率下TAZO薄膜的电阻率为3.88×10-4Ω.cm;同时TAZO薄膜的光学性能也优于TZO薄膜,所有TAZO薄膜样品的可见光透过率均大于91%,而TZO薄膜的可见光透过率均大于85%。
Transparent conducting Ti-doped ZnO(TZO) films and Ti-Al co-doped ZnO(TAZO) films with high transparency and relatively low resistivity were successfully prepared on water-cooled glass substrates by a direct current magnetron sputtering at the room temperature.The microstructure,stress,and optic-electrical properties of the prepared films were investigated.The results showed that all the deposited films are polycrystalline with a hexagonal structure and a preferred orientation perpendicular to the substrates along the c-axis.The optical and electrical properties of TAZO thin films are better than that of TZO thin films.When the sputtering power is 100 W,TZO films with the lowest resistivity of 5.17×10^-4 Ω·cm and TAZO films with the resistivity of 3.88×10^-4 Ω·cm are obtained.The visible light transmittance of all TAZO films are above 91%,while the visible light transmittance of all TZO films is only above 85%.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2010年第5期1151-1155,共5页
Journal of Synthetic Crystals
基金
山东省自然科学基金(No.ZR2009GL015)
关键词
TZO薄膜
TAZO薄膜
磁控溅射
光电性能
应力
Ti-doped ZnO
Ti-Al co-doped ZnO
magnetron sputtering
photo-electrical properties
stresss