磁控管非平衡状态对Cr膜微观形貌及性能的影响

Effect of unbalanced coefficient of magnetron on microstructure and properties of Cr film

采用直流磁控溅射方法于不同磁控管非平衡度状态下,通过单靶溅射模式在单晶Si衬底上制备了Cr膜。利用AFM、SEM、四探针测试仪及MTS Nano Indenter XP纳米压入测量仪分别对两种磁控管非平衡状态下所得Cr膜的微观形貌、电阻率、纳米硬度和抗磨损性进行了观察和分析,研究了不同磁控管非平衡状态下Cr膜微观结构与性能之间的关系。结果表明:磁控管非平衡状态显著影响着Cr膜的微观结构及性能。不同非平衡度状态下,镀层晶体均为沿Cr(110)择优生长的柱状晶组织。同一靶基距处,镀层晶粒尺寸及硬度与非平衡度大小成正比,而电阻率及抗磨损性能变化趋势却相反。靶基距亦为影响镀层微观结构和性能的重要因素之一。

With direct current and single magnetron sputtering pattern,Cr films were prepared on single crystal silicon by magnetron sputtering technology under different unbalanced coefficient of magnetron.AFM,SEM,four point probe tester and MTS nano indenter XP system were used to characterize the structure,electrical resistivity,hardness and abrasion resistance of Cr film obtained under two unbalanced states.The experimental results show that the unbalanced coefficient of magnetron has a significant effect on the structure and properties of the Cr films.The microstructure of the Cr films are all columnar crystal along Cr（110） preferred plane under different unbalanced coefficients.At the same substrate-to-target distance,with increasing of magnetron unbalanced coefficient,the grain size and nano-hardness of the films all presents obvious increasing trend,however,the electrical resistivity and abrasion resistance shows a mild decreasing.It is found that the microstructure and properties of films are also depended on the substrate-to-target distance.