摘要
Chromium oxide films were deposited on Si（100） substrates by medium-frequency（MF） unbalanced magnetron sputtering at different target-substrate distances DTS（60,100,120 mm） and sputtering power（2.8,5.6,11.2 kW）,respectively.The structure,surface morphologies,and microhardness of the chromium oxide films were examined by X-ray diffraction（XRD）,atomic force microscopy（AFM）,and microhardness tester.The results indicate that elevated MF sputtering power can improve the crystallization of the films;The DTS value affects the structure of the films by changing the preferential orientation from CrO3（221） to Cr2O3（116）;The microhardness of the chromium oxide films is found to increase with the sputtering power.For preparing the Cr2O3-dominated films with comparatively high-performance,the optimized condition is the target-substrate distance of 100 mm and MF sputtering power of 11.2 kW.
Chromium oxide films were deposited on Si（100） substrates by medium-frequency（MF） unbalanced magnetron sputtering at different target-substrate distances DTS（60,100,120 mm） and sputtering power（2.8,5.6,11.2 kW）,respectively.The structure,surface morphologies,and microhardness of the chromium oxide films were examined by X-ray diffraction（XRD）,atomic force microscopy（AFM）,and microhardness tester.The results indicate that elevated MF sputtering power can improve the crystallization of the films;The DTS value affects the structure of the films by changing the preferential orientation from CrO3（221） to Cr2O3（116）;The microhardness of the chromium oxide films is found to increase with the sputtering power.For preparing the Cr2O3-dominated films with comparatively high-performance,the optimized condition is the target-substrate distance of 100 mm and MF sputtering power of 11.2 kW.
基金
Supported by the Key Project of Ministry of Industry and Information Technology (2009ZX04012-32)
