新型复合稀土掺杂ZnO-Bi2O3基压敏陶瓷

Novel mixed rare earths doped ZnO-Bi_2O_3-based varistor ceramics

采用固相法制备新型复合稀土Sc2O3和Y2O3掺杂ZnO-Bi2O3基压敏陶瓷,并对其显微组织和电性能进行了分析.结果表明,复合稀土掺杂可提高压敏陶瓷的综合性能,并明显优于单一稀土掺杂,复合稀土掺杂对压敏陶瓷电性能的影响规律仍遵循单一稀土掺杂对压敏陶瓷电性能的影响规律.新型复合稀土Sc2O3和Y2O3掺杂ZnO-Bi2O3基压敏陶瓷,在相同的Sc2O3掺杂比例下,随Y2O3掺杂量的增加,电位梯度呈增加的趋势;在相同的Y2O3掺杂比例下,随Sc2O3掺杂量的增加,非线性系数呈增加的趋势.当掺杂Sc2O3的摩尔分数为0.12%、Y2O3的摩尔分数为0.20%时,复合稀土掺杂ZnO-Bi2O3基压敏陶瓷的综合电性能最为理想,电位梯度为410V.mm-1,非线性系数为38.0,漏电流为0.58μA.

Novel mixed rare earth Sc2O3 and Y2O3 doped ZnO-Bi2O3 based varistor ceramics were prepared by a solid reaction route, their electrical properties and microstructure were studied. The results show that mixed rare earth doping can improve the com- prehensive performance of ZnO-Bi/O3 based varistor ceramics more remarkably than single rare earth doping, but the effect of mixed rare earth doping on their electrical properties is consistent with that of single rare earth doping. When the content of Sc2 O3 is the same, the voltage gradient of mixed rare earth Sc2O3 and Y2O3 doped ZnO-Bi2O3 based varistor ceramics increases with the increase of the amount of Y2 O3 ; when the content of Y2 O3 is the same, the nonlinear coefficient of the varistor ceramics increases with the increase of the amount of Se2O3. After adding 0. 12% Sc2O3 and 0.20% Y2O3 （ molar fraction） , mixed rare earth Sc2O3 and Y2O3 doped ZnO- Bi2O3 based varistor ceramics exhibit comparatively ideal comprehensive electrical properties： the threshold voltage is 410 V. mm^-1 the nonlinear coefficient is 38.0, and the leakage current is 0. 58 μA.