摘要
Thin films of CuInS2 were grown on glass reaction method with different [Cu]/[In] substrate by successive ionic layer adsorption and ratios and annealed at 400℃ for 30 rain. The crystal structure and grain sizes of the thin films were characterized by X-ray diffraction method. Atomic force microscopy was used to determine surface morphology of the films. Optical and electrical properties of these films were investigated as a function of [Cu]/[In] ratios. The electrical resistivity of CuInS~ of thin films was determined using a direct current- two probe method in the temperature range of 300-470 K. It is observed that, the electrical resistivity values show a big decreasing with increasing [Cu]/[In] ratio. Hence, the [Cu]/[In] ratio in the solution can drastically affect the structural, electrical, and optical properties of thin films of CuInS2.
