摘要
本文对半桥拓扑结构中高端MOSFET的变压器和硅芯片两种不同驱动方案进行了详细的分析比较,从各种因素考虑,建议选择诸如NCP5181的硅芯片驱动方案比较理想。
The article compares in detail two high-side half-bridge topology MOSFET drive schems for transformers and silicon chips and considering all factors,concludes that it is ideal to choose silicon chip drive schemes such as NCP5181.
出处
《电源世界》
2010年第10期30-32,29,共4页
The World of Power Supply