摘要
在多晶硅制绒中,通过调整HNO_3、HF和水或醋酸的比例可以很好地控制制绒的过程并得到理想的绒面。但是在腐蚀过程中随着HNO_3、HF和硅的消耗会产生大量的副产品(如H_2SiF_6,HNO_2、N_2O_3等),该文通过在反应腐蚀液中预溶解一些硅的方法研究了反应副产品对制绒特性的影响。发现随着预溶硅的增加,在富HNO_3溶液中反应速度出现了先上升后下降的趋势,而在富HF的溶液中反应速度出现了线性下降。最后,针对反应副产物亚硝酸对制绒特性的影响进行了分析。
During wet chemical etching of mc-Si, the etching behavior is controllable by adjusting the rate of HNO3, HF, and H2O or CH3 COOH to obtain a desirable textured surface. But during the wet chemical etching of silicon, large amount of H2SiF6, HNO2, and N2O3 would be produced with consumption of HNO3, HF and silicon. By pre-dissoving silicon in the HNO3/HF/H2O mixture, the impact of byproducts on etching behavior, and analyzed the effect of nitrous acid on texturing properties has been analyzed.
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
2010年第9期1150-1153,共4页
Acta Energiae Solaris Sinica
关键词
多晶制绒
腐蚀速率
表面形貌
wet chemical etching
etching rate
surface topography