Si/Si低温键合界面的XPS研究

XPS Study of the Interfaces of Low-temperature Si/Si Wafer Bonding

利用金属过渡层的方法实现了Si/Si低温键合.拉力测试表明,温度越高,键合强度越大.采用X射线光电子能谱对Si/Si键合界面进行了研究,结果表明,退火样品的界面主要为Au-Si共晶合金;Si-Au含量比随着退火温度的升高和刻蚀深度的增加而增大.

Low-temperature wafer to wafer bonding has been achieved by using intermediate metals.Tensile test shows that the higher the bonding temperature is.The greater the bonding strengthis.The Si/Si interfaces are analyzed by using X-ray photoelectron spectroscopy（XPS）.The results shows that the interface of the samples is made up of Au-Si eutectic alloy and the ratio of Si-Au increases with the annealing temperature increasing.