表面损伤对单晶硅太阳电池制绒的影响

INFLUENCE OF SUB-SURFACE DAMAGE ON TEXTURING OF MONOCRYSTALLINE SILICON WAFERS FOR SOLAR CELLS

研究了不同温度、不同浓度碱溶液去除单晶硅亚表面损伤对单晶硅太阳电池制绒的影响。结果显示,在对亚表面损伤的去除过程中,硅片在不同腐蚀条件下反应的开始阶段和后期表面形貌差异较大。在20%KOH溶液中反应40s后的硅片制绒5min后形成的小凸起远大于在20%KOH溶液中反应100s的硅片制绒5min后形成的小凸起。在20%KOH溶液中反应40s的硅片在制绒过程中金字塔结构的长大不是按照理想的(111)面进行的,而反应100s的硅片制绒过程中金字塔结构的长大则更加规则。

The influence of sub-surface damage removing in different condition including temperature and concentration of alkali solution on texturing of thin monocrystalline silicon wafers for solar cells was studied. It reveals that the surface shapes of silicon wafers are obvious different in the removing process. There are more heaves on the surfaces silicon wa- fers which reacted for 40s in 20% KOH solution at 80~C with textured 5min in alkali solution than the heaves on the silicon wafers which reacted for 100s in 20% KOH solution at 80℃ with textured 5min in alkali solution. The growing of pyramid configuration on the silicon wafer which reacted for dos in 20% KOH solution at 80℃ deviates ideal （111） growing model. But the growing of pyramid configuration on the silicon wafer which reacted for 100s in 20%KOH solution at 80℃ is almost according to ideal （111） growing model.