摘要
针对两种a-Si(n)/c-Si(p)异质结太阳电池结构,应用AFORS_HET软件,分析氢化非晶硅(a-Si:H)和氢化微晶硅(μc-Si:H)两种材料作为背面场时的特性参数对a-Si(n)/c-Si(p)异质结太阳电池性能的影响。结果表明:P型氢化微晶硅(μc-Si:H(p))为背面场时电池性能得到提高,μc-Si:H(p)的背面场特性是关键因素。最后,优化设计出以a-Si:H为窗口层、μc-Si:H为背面场的a-Si(n)/c-Si(p)异质结太阳电池TCO/a-Si:H(n)/a-Si:H(i)/c-Si(p)/a-Si:H(i)/μc-Si:H(p)/TCO,并获得20%的转换效率。
The influence of various structure parameters of μc-Si: H and a-Si: H on the performance of two different struc- tures of the crystalline silicon heterojunction solar cells based on p-type Czochralski silicon has been investigated in de- tails by computer simulation using the AFORS_ HET software. It was found that the BSF parameters of μe-Si:H (p) was key factors to enhance the solar cell performance. Accordingly, the design optimization of the new crystalline silicon het- erojunction solar cells based on p-type Czochralski silicon, i.e., the TCO/a-Si : H (n)/a-Si : H (i)/e-Si (p) / a-Si : H (i) / μc-Si:H(p)/TCO, was provided and the efficiency of 20.00% was obtained.
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
2010年第10期1343-1348,共6页
Acta Energiae Solaris Sinica
基金
国家自然科学基金(60977048)
宁波市重点实验室基金(2007A22006)
江苏大学-常州亿晶光电科技有限公司联合研发项目