用于先进太阳电池的InAs量子点材料制备与表征
GROWTH AND CHARACTERIZATION OF InAs QUANTUM DOTS FOR ANDVANCED SOLAR CELLS
摘要
利用MOCVD外延技术生长InAs量子点材料,通过采用Sb作为表面活性剂,调节所选择InAs量子点材料的生长参数,获得了具有不同尺寸、高密度的InAs量子点材料。
The fabrication of InAs quantum dots with multi-size and high-density grown on GaAs substrate through adjusting different growth parameters by metal-organic chemical-vapor deposition （MOCVD） was studied and obtained by antimony surfactant-mediated growth conditions.
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
2010年第10期1349-1352,共4页
Acta Energiae Solaris Sinica
基金
高功率半导体激光国家重点实验室基金(010602)
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