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应变Si PMOSFET电流特性研究 被引量：1

Study on Strained Si PMOSFET Current Characteristic
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摘要 生长在弛豫SiGe层上的Si产生张应变,使载流子的迁移率显著提高,因此应变SiPMOSTET可以得到非常好的性能。在讨论分析了应变SiPMOSFET的结构特性和器件物理的基础上,推导泊松方程求出解析的阈值电压模型,以及电流电压特性,和跨导等电学特性参数模型,并用MATLAB进行了模拟,与参考文献取得了一致的结果。此模型作为对PMOSFET进行模拟是非常有用的工具。 The tensile strain Si layer grown on the relaxed-SiGe can prominently increase the carrier mobility,so that the strained Si PMOSFET performs excellently.The strained Si PMOSFET is analyzed based on its structure and device physics,the threshold voltage model is established by deduced Poisson equation,and the model of voltage-current character,transconductance and other electrical parameter are founded.Then the model is simulated by using MATLAB and the simulation results are in accordance with the reference related.This model is a useful tool for studying and analyzing of PMOSFET.
作者 胡辉勇 崔晓英 张鹤鸣 宋建军 戴显英 宣荣喜
机构地区 西安电子科技大学微电子学院 中国电子科技集团第五研究所分析中心
出处 《电子器件》 CAS 2010年第4期438-441,共4页 Chinese Journal of Electron Devices
基金 国家部委资助项目(51308040203,6139801,72104089)
关键词 应变SI PMOSFET 阈值电压 I-V特性 strained-S PMOSFET threshold voltage I-V character
分类号 TN432 [电子电信—微电子学与固体电子学]
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参考文献11

  • 1Zhang Weimin,Fossum Jerry G.On the Threshold Voltage of Strained-Si-SiGe MOSFETs[J].IEEE Transactions on Electron Devices,2005,52(2):263.
  • 2Olsen S H,Kwa K S K,Driscoll LS,et al.Design,Fabrication and Characterisation of Strained Si-SiGe MOS Transistors[J].IEE Process-Circuits Devices System,2004,151(10):431.
  • 3Jung Jongwan,Lee Mingjoo L,Yu Shaofeng,et al.Implementation of Both High-Hole and Electron Mobility in Strained Si/Strained Si1-yGey on Relaxed Si1-xGex (x<y) Virtual Substrate.IEEE Electron Device Letters,2003,24(7):460.
  • 4Goo Jung-Suk,Qi Xiang,Yayoi Takamura,et al.Band Offset Induced Threshold Variation in Strained-Si nMOSFETs[J].IEEE Electron Device Letter,2003,24(9):568.
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引证文献1

电子器件
2010年 第4期

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