图形反转方法制备MEMS器件电极的研究

Research on the Fabrication Process of Electrode Used in MEMS by Image Reversal Technology

研究了利用AZ5214光刻胶图形反转实现抗腐蚀金属NiCr剥离的关键工艺步骤,该方法可以用于制备金属电极,进而优化器件性能。理论上讨论了图形反转的形成机理,根据Dill理论对光刻胶曝光模型进行了推导,并使用MATLAB模拟工具对其进行了仿真。通过优化各项工艺参数,得到了最佳倒台面结构,并制备了精度达到1μm宽的用于MEMS器件的金属NiCr电极。

The preparation of corrosion-resistance metal NiCr electrode based on AZ5214 photoresist using in graphic inversion technology was investigated.The method can be used to produce well-proportioned metal electrode,and optimized device performance.The formation mechanism of the graphic inversion was discussed firstly,and photoresist exposure model was simulated according to Dill theory,MATLAB tools were used for the photoresist exposing and developing simulation.The best back table shape was preparate through the coordination of the various process steps,and NiCr electrode with the accuracy of 1 μm width for MEMS devices was made.