基于HICUM模型的高速锗硅异质结双极性晶体管可缩放模型研究(英文)

Scalable HICUM Model for High-Speed SiGe HBTs

针对高速锗硅异质结双极性晶体管,在基于HICUM模型的基础上,建立了HICUM可缩放模型,并且在ADS和Hspice中都得到了很好的应用。可缩放模型是基于不同的尺寸的器件而建立的,所有可缩放模型中的参数都是直接从不同尺寸器件的测量数据中取得的,并且通过比较直流、电压电容关系、截止频率和S参数的测量和仿真数据,可以看出拟合结果比较好,HICUM可缩放模型得到了很好的验证。

A scalable HICUM model for high-speed SiGe HBTs is developed based on HICUM model.This model is well applied to simulation software of ADS and Hspice.The scaling is mainly based on different physical dimension of individual devices,all the scalable parameters in the scalable equations are extracted directly from the measurement data of various geometry.The correctness of this scalable model is further verified by the quite good fit between measured and simulated results on DC,CV,Ft and S parameters at the frequency up to 30 GHz.