a-SiTFT中钼与非晶硅之间的互作用

The Reaction between a Si and Mo in an a Si TFT

本文报导当在室温下向非晶硅（ａ－Ｓｉ）表面溅射钼（Ｍｏ）的过程中，Ｍｏ与非晶硅发生互作用的现象。该互作用要求一定的临界溅射功率与钼层厚度。其作用速率在ａ－Ｓｉ界面为反应速率限制，而在与Ｍｏ交界面则为扩散速率限制。互作用生成非晶态钼硅Ｍｏ：ａ－Ｓｉ合金。它可阻止铝（Ａｌ）向ａ－Ｓｉ中扩散，同时可改善ａ－ＳｉＴＦＴ的接触特性。当用Ａｌ／Ｍｏ作ａ－Ｓｉ薄膜晶体管（ａ－ＳｉＴＦＴ）的源和漏电极时，可提高开关电流比达７～８个数量级。

The reaction between a Si and Molybdnum (Mo) has been occurred during sputtering the Mo film on a Si at room temperature.This kind of reaction needs a critical sputtering power and time for formatting the a Si:Mo alloy.The reaction is diffusion rate limit near the interface of Mo/a Si:Mo alloy,but at the interface of a Si:Mo/a Si the reaction is reaction rate limit.The a Si:Mo alloy can prevent the Al diffusing into a Si and is a high conductive material.It can improve the contact characteristics of a Si TFTs and use as a good source and drain electrode material of double redundant structure with Mo and Al.The TFT of ratio of I on / I off with 7～8 order of magnitude have been obtained.