GaAs(001)衬底上分子束外延生长InNSb单晶薄膜

InNSb single crystal films prepared on GaAs (001) substrates by molecular beam epitaxy

利用射频氮等离子辅助分子束外延(RF-MBE)技术在GaAs(001)衬底上生长稀氮InNSb半导体薄膜,并通过原子力显微镜(AFM)、扫描电子显微镜(SEM)、X射线衍射仪(XRD)和拉曼散射光谱等测量手段对样品的微结构和N组分等进行了表征.结果显示样品有较好的晶体质量,N组分可高达0.84%(XRD的结果).本文还对样品的输运性质进行了表征,结果显示样品在室温下具有较低的载流子浓度和较高的迁移率.另外,初步研究表明在InSb中掺入N可导致其室温磁阻明显下降.

InNSb alloy films are prepared on GaAs （001） substrates by the N2 radio frequency plasma-assisted molecular beam epitaxy （RF-MBE）.The N composition and the micro-structure of the samples are characterized by atom force microscopy （AFM）,scanning electron microscopy （SEM）,X-ray diffraction （XRD） and Raman spectroscopy.The measurement results reveal that the films have smooth surfaces and good crystalline quality,the N composition can reach 0.84% （from XRD） and most of the N atoms in the samples are at the sites of Sb atoms.The transport properties of the samples are also characterized,and the results demonstrate that our samples have lower carrier concentrations and higher mobilities.Owing to the introduction of N,a condside rable reduction of room-temperature magnetoresistance is observed.