双极晶体管在强电磁脉冲作用下的损伤效应与机理

The damage effect and mechanism of the bipolar transistor induced by the intense electromagnetic pulse

针对典型n+-p-n-n+结构的双极晶体管,从器件内部电场强度、电流密度和温度分布变化的分析出发,研究了在强电磁脉冲(electromagnetic pulse,EMP)作用下其内在损伤过程与机理.研究表明,双极晶体管损伤部位在不同幅度的注入电压作用下是不同的,注入电压幅度较低时,发射区中心下方的集电区附近首先烧毁,而在高幅度注入电压作用下,由于基区-外延层-衬底构成的PIN结构发生击穿,导致靠近发射极一侧的基极边缘处首先发生烧毁.利用数据分析软件,对不同注入电压下的器件损伤功率P和脉宽T进行拟合得出了P与T之间的关系式,结果表明由于双极晶体管损伤能量的不确定性,强电磁脉冲损伤的经验公式P=AT-1(A为常数)对于双极晶体管应修正为P=AT-1.4.

A study of the internal damage process and mechanism of the typical n ＋ -p-n-n ＋ structure bipolar transistor induced by the intense electromagnetic pulse （EMP） is carried out in this paper from the variation analysis of the distribution of the electric field,the current density and the temperature. Research shows that the damage position of the bipolar transistor is different with the different magnitude of the injecting voltage, when the magnitude of the injecting voltage is low the damage will appear firstly near the eolleetor region under the eenter of the emitter region,and when the magnitude of the injecting voltage is sufficiently high the damage will appear firstly at the edge of the base near the emitter due to the breakdown of the PIN structure composed of the base-epitaxial layer-collector. Adopting the data analysis software, the relation equation between the deviee damage power P and the pulse width T under different injecting voltage is obtained. Owing to the variety of the device damage energy, it is demonstrated that the empirical formulas of the intense electromagnetic pulse P = AT-1 （A is a constant） is modified to P = AT-1.4 for the bipolar transistor.