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High temperature characterization of double base epilayer 4H-SiC BJTs

High temperature characterization of double base epilayer 4H-SiC BJTs
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摘要 Based on the material characteristics and the operational principle of the double base epilayer BJTs,and according to the drift-diffusion and the carrier recombination theory,the common emitter current gain is calculated considering four recombination processes.Then its performance is analyzed under high temperature conditions.The results show that the emitter injection efficiency decreases due to an increase in the base ionization rate with increasing temperature.Meanwhile,the SiC/SiO2 interface states and the quality of the passivation layer will affect the surface recombination velocity,and make an obvious current gain fall-off at a high collector current. Based on the material characteristics and the operational principle of the double base epilayer BJTs,and according to the drift-diffusion and the carrier recombination theory,the common emitter current gain is calculated considering four recombination processes.Then its performance is analyzed under high temperature conditions.The results show that the emitter injection efficiency decreases due to an increase in the base ionization rate with increasing temperature.Meanwhile,the SiC/SiO2 interface states and the quality of the passivation layer will affect the surface recombination velocity,and make an obvious current gain fall-off at a high collector current.
作者 张倩 张玉明 张义门 王悦湖
机构地区 Key Laboratory of Semiconductor Wide Band-Gap Materials and Devices
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2010年第11期24-28,共5页 半导体学报（英文版）
基金 Project supported by the National Natural Science Foundation of China(No.60876061) the Key Laboratory Foundation of China (No.20090C1403)
关键词 4H-SIC bipolar junction transistors（BJTs） current gain carrier recombination high temperature 4H-SiC； bipolar junction transistors（BJTs）； current gain； carrier recombination； high temperature；
分类号 TN322.8 [电子电信—物理电子学] TP212 [自动化与计算机技术—检测技术与自动化装置]
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参考文献13

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Journal of Semiconductors
2010年 第11期

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