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A novel TFS-IGBT with a super junction floating layer 被引量:3

A novel TFS-IGBT with a super junction floating layer
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摘要 A novel trench field stop(TFS) IGBT with a super junction(SJ) floating layer(SJ TFS-IGBT) is proposed. This IGBT presents a high blocking voltage(〉 1200 V),low on-state voltage drop and fast turn-off capability.A SJ floating layer with a high doping concentration introduces a new electric field peak at the anode side and optimizes carrier distribution,which will improve the breakdown voltage in the off-state and decrease the energy loss in the on-state /switching state for the SJ TFS-IGBT.A low on-state voltage(VF) and a high breakdown voltage(BV) can be achieved by increasing the thickness of the SJ floating layer under the condition of exact charge balance.A low turn-off loss can be achieved by decreasing the concentration of the P-anode.Simulation results show that the BV is enhanced by 100 V,VF is decreased by 0.33 V(at 100 A/cm2) and the turn-off time is shortened by 60%,compared with conventional TFS-IGBTs. A novel trench field stop(TFS) IGBT with a super junction(SJ) floating layer(SJ TFS-IGBT) is proposed. This IGBT presents a high blocking voltage(〉 1200 V),low on-state voltage drop and fast turn-off capability.A SJ floating layer with a high doping concentration introduces a new electric field peak at the anode side and optimizes carrier distribution,which will improve the breakdown voltage in the off-state and decrease the energy loss in the on-state /switching state for the SJ TFS-IGBT.A low on-state voltage(VF) and a high breakdown voltage(BV) can be achieved by increasing the thickness of the SJ floating layer under the condition of exact charge balance.A low turn-off loss can be achieved by decreasing the concentration of the P-anode.Simulation results show that the BV is enhanced by 100 V,VF is decreased by 0.33 V(at 100 A/cm2) and the turn-off time is shortened by 60%,compared with conventional TFS-IGBTs.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2010年第11期38-42,共5页 半导体学报(英文版)
基金 Project supported by the National Natural Science Foundation of China(No.60906038) the Science-Technology Foundation for Young Scientist of University of Electronic Science and Technology of China(No.L08010301JX0830)
关键词 IGBT super junction on-state voltage breakdown voltage energy loss charge balance IGBT; super junction; on-state voltage; breakdown voltage; energy loss; charge balance;
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