摘要
Room temperature,continuous-wave bistable operation is achieved in two-section 1.24μm InAs quantum-dot （QD） lasers with integrated intracavity QD saturable absorbers（SA）.It is found that the hysteresis width is narrowed with increasing reverse bias voltage,and broadened with increasing length of saturable absorber.This can be explained by the competition between QD absorption and electroabsorption in the SA section.In addition,a larger hysteresis width is realized than other reports so far,which can be attributed to a greater number of stacked layers of active region in our case.The experimental results can be explained by a modified threshold current model.
Room temperature,continuous-wave bistable operation is achieved in two-section 1.24μm InAs quantum-dot （QD） lasers with integrated intracavity QD saturable absorbers（SA）.It is found that the hysteresis width is narrowed with increasing reverse bias voltage,and broadened with increasing length of saturable absorber.This can be explained by the competition between QD absorption and electroabsorption in the SA section.In addition,a larger hysteresis width is realized than other reports so far,which can be attributed to a greater number of stacked layers of active region in our case.The experimental results can be explained by a modified threshold current model.
