摘要
A novel asymmetrical current-based sensing scheme for 1T1C FRAM is proposed,in which the two input transistors are not the same size and a feedback NMOS is added at the reference side of the sense amplifier.Compared with the conventional symmetrical scheme in Ref.[8],the proposed scheme increases the sense margin of the readout current by 53.9%and decreases the sensing power consumption by 14.1%,at the cost of an additional 7.89%area of the sensing scheme.An experimental FRAM prototype utilizing the proposed asymmetrical scheme is implemented in a 0.35μm three metal process,in which the function of the prototype is verified.
A novel asymmetrical current-based sensing scheme for 1T1C FRAM is proposed,in which the two input transistors are not the same size and a feedback NMOS is added at the reference side of the sense amplifier.Compared with the conventional symmetrical scheme in Ref.[8],the proposed scheme increases the sense margin of the readout current by 53.9%and decreases the sensing power consumption by 14.1%,at the cost of an additional 7.89%area of the sensing scheme.An experimental FRAM prototype utilizing the proposed asymmetrical scheme is implemented in a 0.35μm three metal process,in which the function of the prototype is verified.
基金
Project supported by the National High Technology Research and Development Program of China(No.2009AA01Z115)
the Key National Science and Technology Specific Project of China(No.2009ZX02023-1-3)
