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任意纵向变掺杂横向功率器件二维耐压模型 被引量：1

A 2-D Breakdown Model of Lateral Power Device with Arbitrary Vertical Doping Profile Drift
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摘要 基于二维泊松方程的解,建立了漂移区全耗尽和不全耗尽情况下任意纵向掺杂的横向功率器件二维电场分布模型,进而导出了纵向和横向击穿电压表达式,得到了一个新的RESURF判据。借助此模型,研究了漂移区纵向杂质分布分别为均匀、线性递减、线性递增和高斯四种典型分布的功率器件的耐压机理和工作特性。解析结果和半导体器件仿真器MEDICI的数值结果吻合较好,验证了模型的准确性。 Based on two-dimention Poisson equation,a unified analytical model is derived to calculate the surface electric field profiles of the lateral power device with arbitrary vertical doping profiles in the drift region.Then,the vertical and lateral breakdown voltages are formulized to quantify the breakdown characteristic in completely-depleted and partially-depleted cases.A new RESURF criteria used in various drift doping profiles is derived to maximize the breakdown voltage.Using these models,breakdown mechanism and operating characteristics of lateral power devices are investigated for the uniform,linearly increase,linearly decrease and Gaussian distributions along the vertical direction in the drift region.Analytical results shown a good agreement with the numerical simulation results obtained by the semiconductor device simulator MEDICI.
作者 郭宇锋 花婷婷
机构地区 南京邮电大学电子科学与工程学院
出处 《南京邮电大学学报（自然科学版）》 2010年第5期11-15,共5页 Journal of Nanjing University of Posts and Telecommunications：Natural Science Edition
基金 国家自然科学基金(60806027 61076073) 中国博士后科学基金(20070411013) 电子薄膜与集成器件国家重点实验室基金(KF2008001) 江苏省高校自然科学基金(08KJA510002 09KJB510010)资助项目
关键词 降低表面电场 功率器件 表面电场 击穿电压 解析模型 RESURF power device surface electrical field breakdown voltage analytical model
分类号 TN386 [电子电信—物理电子学]
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参考文献9

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二级参考文献35

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共引文献5

同被引文献11

  • 1孟坚,高珊,陈军宁,柯导明,孙伟锋,时龙兴,徐超.用阱作高阻漂移区的LDMOS导通电阻的解析模型[J].Journal of Semiconductors,2005,26(10):1983-1988. 被引量：4
  • 2APPELS J A, VAES H M J. High voltage thin layer devices ( RE- SURF devices) [ C]//IEDM Tech Dig. 1979:238 -241.
  • 3HUANG Y S,BALIGA B J. Extension of resurf Principle to dielec- trieally isolated Power devices [ C ]//Proceeding of IEEE ISPSD. 1991:27 - 30.
  • 4MERCHANT S, ARNOLD E, BAUMGART H, et al. Realization of high breakdown vohage ( > 700V ) in thin sol devices [ C ]//Proc IEEE ISPSD. Piscataway : IEEE, 1991 : 31 - 35.
  • 5CHUNG S K, HAN S Y. Analytical model for the surface field distri- bution of SOl RESURF devices [ J]. IEEE Transactions on Electron Devices, 1998,45 (6) : 1374 - 1376.
  • 6LI W H, LUO J S. A novel analytical physical model for thin film SO1 RESURF structure based on 2-D Poisson equation [ C]//Proc IEEE ISPSD. 1998:724 - 727.
  • 7POPESCU A,UDREA F, MILNE W. A numerical study of the RE- SURF effect in bulk and SOl powder devices [ C]//Proc IEEE CAS. 1997,1 : 127 - 130.
  • 8SUN W F,SHI L X. Analytical Models for the Surface Potential and Electrical Field Distribution of Bulk-Silicon RESURF Devices [ J ]. Solid-State Electronics ,2004,48:799 - 805.
  • 9CHUNG S K. An analytical model for breakdown voltage of surface implanted SOl RESURF LDMOS [J]. IEEE Transactions on Elec- tron Devices, 2000,47 ( 5 ) : 1006 - 1009.
  • 10SHEU G, LIN Y H. Comparison of high voltage (200-300 volts) lateral power MOSFETs for power integrated circuits [ J]. ECS Transactions on Design and Device Engineering,2010,27 (1) :103 - 108.

引证文献1

南京邮电大学学报（自然科学版）
2010年 第5期

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