摘要
介绍了最新发展的粒子数混合超快光谱测量技术，以及采用该技术对自组织生长ＩｎＡｓ／ＧａＡｓ量子点发光动力学的研究结果．实验发现，自组织ＩｎＡｓ／ＧａＡｓ量子点结构的发光寿命大约为１ｎｓ，与ＩｎＡｓ层厚度关系不大；激子寿命与温度有一定的关系，但没有明显的实验证据表明与量子点的δ态密度有关；用粒子数混合技术，实验上可直接观察到量子点中载流子在激发态能级的态填充过程．
Abstract Using a newly
developed population mixing technique we have studied the exciton dynamics in self organized
InAs/GaAs quantum dots (QDs).It is found that the exciton lifetime in self organized InAs/GaAs
QDs is around 1ns, almost independent of InAs layer thickness.The temperature dependence of
the exciton lifetime varies from sample to sample,but no obvious experimental evidence was
found that the lifetime is related to the δ function of density of states in QDs.We have also
found that the population mixing technique can be used to directly reveal the band filling effect
in the excited states of the QDs.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1999年第4期744-750,共7页
Acta Physica Sinica
基金
国家自然科学基金
国家攀登计划基础研究资助
