摘要
各种外延技术已被用来在GaAs衬底上生长GaxIn1-xP外延单晶薄膜(GaInP2/GaAs).很多文献认为,在GaInP2/GaAs生长过程中会被C杂质污染.我们用高灵敏的CAMECAIMS4F型二次离子质谱仪直接测量的结果表明,污染GaInP2/GaAs的微量杂质是Si,而不是C.由GaInP2/GaAs在1.17eV附近的光致发光峰的峰值随激发强度的变化形状表明了它应属于施主-受主对复合发光.进一步分析表明,施主为处在Ga格位上的Si杂质(SiGa),受主为Ga空位(VGa).
Various epitaxial techniques have been utilized for growing Ga x In 1-x P epilayers on GaAs substrates (GaInP 2/GaAs). Impurities in the epitaxial GaInP 2/GaAs seriously effect on its optical and electrical properties. Therefore, it is important to demonstrate what kinds of impurities are common contaminants in epitaxial GaInP 2/GaAs. A lot of literatures considered C as a contaminant during growing GaInP 2/GaAs epilayers. Our measurements with CAMECA IMS 4F secondary ion mass spectrometer indicated that there exists contaminant Si instead of C in GaInP 2/GaAs samples. The shape for the variation of excitation intensity versus peak energy of the photoluminescence (PL) emission nearby 1.17eV in GaInP 2/GaAs samples illustrated that 1.17eV PL emission could be considered as a donor acceptor pair (DAP) transition, and furthermore, as a DAP transition of Si Ga V Ga , where Si Ga is a silicon donor on a gallium sublattice site and V Ga is a gallium vacancy acceptor.
出处
《发光学报》
EI
CAS
CSCD
北大核心
1999年第1期25-28,共4页
Chinese Journal of Luminescence
关键词
外延薄膜
污染杂质
镓铟磷
砷化镓
复合发光
GaInP 2/GaAs epilayers, Si contaminant, a donor acceptor pair transition