摘要
在５．０ｅＶ的激光激发下，在室温下ＬＰＣＶＤ氮化硅薄膜可发射高强度可见荧光，其峰位位置分别为２．９７，２．７７，２．５５，２．３２，２．１０和１．９０ｅＶ的六个ＰＬ峰，建立了其可见荧光发射的能隙态模型，并初步讨论了其发光机制．
At 5.0eV laser excitation, six luminescence emission bands of LPCVD silicon nitride film were observed corresponding to 2.97, 2.77, 2.55, 2.32, 2.10 and 1.90eV respectively. Reports on the gap state model of LPCVD silicon nitride film have been made by this paper. The origin of these emission bands are discussed.
出处
《发光学报》
EI
CAS
CSCD
北大核心
1999年第1期37-40,共4页
Chinese Journal of Luminescence
基金
中国科学技术大学研究生院院长择优基金
