半导体InAs量子点单光子发射器件

Semiconductor InAs quantum dot single-photon emission devices

文章概述了量子点单光子源的研究现状,综述了微腔量子点耦合单光子发射器件制备中关键的低密度InAs量子点外延技术,单量子点单光子发射二阶关联函数HBT检测方法,分布布拉格反馈微腔结构的制备以及实现液氮温度下电驱动微腔量子点单光子发射器件等研究结果.

Recent progress in the development of single -photon source devices is reviewed. The epitaxial growth of low density InAs self-assembled quantum dots, Hanhury Brown and Twiss measurements of the second order correlation functions of the luminescence from InAs single quantum dots, and the fabrication of distributed feedback Bragg microcavity structures are discussed. Electrically driven single-photon emission devices operated at liquid nitrogen temperatures have been successfully realized.