退火处理对氢化纳米晶/非晶硅两相薄膜的结构和光学性能的影响

Influence of Thermal Annealing on Micro-Structure and Optical Property of nc/αc-Si:H Films

利用等离子化学气相沉积(PECVD)方法低温制备不同晶态比的氢化纳米晶/非晶硅两相薄膜,在高纯氮气下对其进行不同温度(300-500℃)的退火处理,并利用X射线衍射(XRD)?拉曼光谱(Raman)、原子力显微镜(AFM)、傅里叶红外光谱(FT-IR)和紫外-可见光透射谱(UV-VIS)对其结构和光学性能进行研究。结果显示400-500℃退火在一定程度上提高了低晶态比的氢化纳米硅/非晶硅两相薄膜的结晶度,而高晶态比的氢化纳米硅/非晶硅两相薄膜在500℃下退火20 min,其结构和光学特性显示出比较好的热稳定性。

Hydrogenared nanocrystalline/amorphous silicon（nc/αc-Si：H） films were prepared by plasma enhanced chemical vapor deposition（PECVD）,then were thermal treated using rapid annealing equipment in nitrogen ambient at different temperatures（300-500℃）.The structures and optical property were examined by X-ray diffraction（XRD）,Raman spectrometer（Raman）,atomic force microscopy（AFM） and UV-visible transmission spectra（UV-VIS）,etc.The measurement results indicated that the annealing at 500℃ could improve the crystallization of nc/ac-Si：H films with a low crystallization rate.However the nc/ac-Si：H films with a high crystallization rate show a thermal stability under the annealing at 500℃ for 20min.