磁控溅射法生长ZnO薄膜的结构和表面形貌特性

Structure and morphology characteristics of ZnO thin films grown by RF magnetron sputtering

采用射频磁控溅射方法,在Si(111)和玻璃基片上制备ZnO薄膜。研究衬底温度和基片类型对薄膜结构、表面形貌的影响。结果显示,所有ZnO薄膜沿c轴择优生长,同种基片类型上生长的薄膜,随着衬底温度升高,(002)衍射峰强度和表面粗糙度增高;相同衬底温度下生长的ZnO薄膜,Si基片上制备的薄膜(002)衍射峰强度和表面粗糙度小于玻璃片上的。基片类型影响薄膜应力状态,玻璃片上制备的ZnO薄膜处于张应变状态,Si基片上的薄膜处于压应变状态;对于同种基片类型上生长的ZnO薄膜,衬底温度升高,应力减小。Si衬底上、300℃下沉积的薄膜颗粒尺寸分布呈正态。

ZnO thin films were deposited on Si（111） and glass substrates at 100℃ and 300℃ respectively by radio frequency magnetron sputtering.The influence of growth temperatures and substrate type on the micorstructure and morphology of ZnO thin films were investigated by X-ray diffraction（XRD） and atomic force microscopy（AFM） at room temperature.The results indicated that the thin films have hexagonal wurtzite single phase structure.The films deposited on the Si substrates are in the states of compressive strain while the films deposited on the glass substrates are in tensile.With the increasing temperature the intensities of the stress increase,the intensities of the XRD（002） peaks,Rms also increase.