浮栅存储器的单粒子辐射效应研究进展

Single event effect in floating gate memories

综述了浮栅存储器的单粒子效应国外研究进展,对浮栅存储器控制电路及存储单元的单粒子效应进行详细分析和讨论。指出控制电路是浮栅存储器单粒子效应的关键部件以及重离子轰击使浮栅存储器数据保持特性退化;阐述了浮栅存储单元辐射后可能的电荷损失机制。最后指出纳米晶浮栅存储器具有好的抗辐射能力。

Single event effect（SEE） in floating gate memories are reviewed.SEE in the control circuit and the memory cell are analyzed and discussed in detail.This paper points out that the control circuit is the key part in the memory＇s radiation effect and the heavy ions＇ irradiation degrade the data retention characteristics of the floating gate memories.The possible mechanism of charge loss in memory cell after radiation is discussed.Finally,it is pointed out that nanocrystal memories have good tolerance to heavy ions＇ irradiation.