直流反应磁控溅射制备非晶掺锌氧化铟沟道层薄膜

Amorphous zinc-doped indium oxide channel layers prepared by DC reactive magnetron sputtering

采用直流反应磁控溅射In/Zn合金靶材在室温下制备了非晶掺锌氧化铟(a-IZO)薄膜,作为沟道层应用于氧化物薄膜晶体管。通过在沉积过程中适当调节氧气压强,制备的a-IZO薄膜的电阻率可具有10-3～106Ω.cm即109倍的变化范围。在氧气压强Po2=5×10-2Pa制备的薄膜,其可见光范围平均透射率大于85%。试制了基于a-IZO薄膜沟道层的顶栅结构的氧化物薄膜晶体管。测试表明该薄膜晶体管工作在n型沟道增强模式,场效应迁移率为4.25 cm2V-1s-1,电流开关比约为103。实验结果预示a-IZO薄膜在TFT-LCD和AMOLED等平板显示领域具有应用前景。

Amorphous zinc-doped indium oxide（a-IZO） thin films have been deposited on glass substrates by DC reactive magnetron sputtering at room temperature.The resistivity of the thin films can be adjusted from 10-3 to 106 Ω·cm through the proper control of the oxygen pressure during the deposition process.For the films deposited at oxygen pressure of 5×10^-2 Pa,the average transmission in the visible region is more than 85%.Oxide thin film transistors（Oxide-TFTs） were fabricated using as-deposited a-IZO as channel layer.The top-gate-type Oxide-TFTs operate in n-type enhancement mode with a field-effect mobility of 4.25 cm2V^-1s^-1,an on-off current ratio of 10^3.The primary results reveal that a-IZO has potential application in oxide-TFTs for flat panel display such as TFT-LCD and TFT-OLED.