半导体工艺中硅衬底凹坑缺陷的检测

The Detection of Bullet-like Defect of Silicon Substrate in Semiconductor Process

通过两个角度分析加深晶体缺陷的概念理解,结合一次工艺生产中造成芯片失效的晶体缺陷检测,分析造成此次芯片失效的晶体缺陷的种类和位置,并且给出了解决方案。

The paper introduces a detection experiment of the crystal defect.In combination with a detection of crystal defects causing chipinvalidation in production,the paper analyzes the type and the locations of crystal defects and gives a solution.