多孔硅衬底上无催化剂制备GaN纳米线

Catalyst-free Synthesis of GaN Nanowires on Porous Silicon

采用化学气相沉积(CVD)法,在1050℃的温度下,以多孔硅(PS)为衬底,成功地制备出GaN纳米线.采用X射线衍射(XRD)、扫描电子显微镜(SEM)、X射线能量色散谱(EDS)和光致发光(PL)谱对样品的物相、形貌、成分及发光性质进行了分析.研究结果表明,产物为六方纤锌矿结构的GaN纳米线,纳米线的直径范围为30nm到100nm,长度达几十微米,位于376.2nm处有一带边发射峰,在435.8nm处有一个因缺陷引起的弱发光峰.最后简单讨论了制备GaN纳米线的相关化学反应和生长机制.

Gallium nitride （GaN） Nanowires was grown on porous silicon （PS） substrates by chemical vapor deposition （CVD） at temperature of 1050℃without the presence of catalyst. The products were characterized by X-Ray diffraction （XRD）, scanning electron microscopy （SEM）,X-Ray energy dispersive spectrometer （EDS） and Photo Luminescence （PL）.The results showed that the products are compose a large quantity of GaN nanowires with hexagonal wurtzite structure. Their diameters were in the range of 30-100nm and the length could be up to several micrometers. In the PL spectrum of the GaN nanowires, a band-edge emission was observed at 376.2nm and one weak defect-related emission at 435.8nm was detected. The growth mechanism of GaN nanowires and related reactions were also discussed.