非掺杂半绝缘LECGaAs中深施主缺陷对注入硅激活率的影响

Effect of the Deep Donor Defect on the Activation Coefficient of Implanted Silicon in Semiinsulating LECGaAs

通过测量ＧａＡｓ金属半导体场效应晶体管（ＭＥＳＦＥＴ）的饱和漏－源电流分布研究了深施主缺陷ＥＬ２对半绝缘（ＳＩ）ＬＥＣＧａＡｓ中注入硅（Ｓｉ）激活率的影响，发现激活率随ＥＬ２浓度的增加而增加，讨论了ＥＬ２影响硅注入激活率的机理．

The effect of the deep donor defect EL 2 on the activation coefficient of implanted silicon in semiinsulating LECGaAs has been studied by examining the uniformity of the saturation drain current of the GaAs metalsemiconductor fieldeffect transistors fabricated on the semiinsulating GaAs substrate.It is found that the activation coefficient of the implanted silicon increases with increasing the EL 2 concentration.The mechanism for EL 2to influence the activation coefficient is discussed.