摘要
】实验发现WO3半导体材料对O3有好的敏感特性,而且元件的烧结温度和工作温度对其敏感特性有大的影响。在对这些参数优化的基础上,研制出了具有较好特性的O3气敏元件。测定了元件灵敏度与O3浓度的关系,初步讨论了元件对O3气体敏感的机制。
It is found that WO 3 semi-conductive material has excellent sensitivity to O 3 in our experiments. Furthermore, the sintered temperature of prepared element and operating temperature of the ozone sensor effect on the sensitivity greatly. A perfect ozone sensitive sensor has been made by improving those parameters. The relation between the sensitivity of the sensor and the O 3 concentration has been studied, and sensitive mechanism of the ozone sensitive sensors has been preliminarily discussed.
出处
《仪表技术与传感器》
CSCD
北大核心
1999年第5期28-30,共3页
Instrument Technique and Sensor
关键词
半导体
臭氧传感器
三氧化镍
臭氧
敏感特性
WO 3 Semi-conductor,Sintering Temperature,Chemisorption,O 3 Sensor