摘要
X射线光刻是一种能满足下世纪初超大规模集成电路(VLSI)生产的深亚微米图形加工技术。论述了这种光刻技术的发展历史及近年来的主要进展。重点讨论了在X射线源、接近式曝光和全反射投影曝光等方面取得的成就与存在的问题。
X ray lithography is a main candidate for printing sub 0 1μm features needed for very large scale integrated circuits(VLSI) at the beginning of the next century. The history and recent advances of this technology are reviewed, especially emphasis on important technical accomplishments and challenges in X ray sources, proximity exposure and all reflective projection lithography. Future directions of the X ray lithography are presented briefly.
出处
《光学技术》
CAS
CSCD
1999年第3期91-93,96,共4页
Optical Technique