期刊文献+

pH值对ADP晶体(100)面生长的影响 被引量:2

Effect of pH value on the growth of the(100) face of ADP crystal
下载PDF
导出
摘要 通过对40℃、不同pH值和过饱和度下ADP晶体(100)面法向生长速度的研究,发现在同一过饱和度下,改变pH值后晶面的生长速度明显加快。实验数据显示,在过饱和度较低时,(100)面的生长以螺旋位错生长机制为主;过饱和度较高时,以二维成核生长机制为主,而且pH值的改变会促使ADP晶体在较低的过饱和度下就从位错生长机制向二维成核生长机制转变。利用实验数据计算出了不同pH值下、二维成核生长机制控制晶体生长时的台阶棱边能。最后,运用原子力显微镜(AFM)非实时观察了不同过饱和度、不同pH值下生长的ADP晶体(100)面的微观形貌,发现与正常pH值相比,在较低的过饱和度下,pH=2.5和5.0的晶面上就出现了二维核。 Through investigating the growth rate of the(100) face of ammonium dihydrogen phosphate(ADP) crystal with different pH values at different supersaturations at 40℃,it is found that the growth rates of the(100) face improved noticeably after changing the pH value in the same supersaturations.The experimental results show that the growth of crystal is controlled by the dislocation mechanism at the lower supersaturations,and at the higher supersaturations,two-dimensional(2D) nucleation mechanism dominates the growth.Moreover,the growth mechanism transition from dislocation to 2 Dnucleation mechanism would occur at the lower supersaturations with the change of pH values.The edge free energy of the(100) face of ADP crystal with different pH values are calculated when the growth is controlled by 2 Dnucleation mechanism.Finally,the topography of the(100) surface of ADP crystal with different pH values at different supersaturations are observed by ex situ AFM.It is found that there are 2 Dnucleations appearing in the crystal surface with pH=2.5 and 5.0 at lower supersaturations compared with the normal pH.
出处 《功能材料》 EI CAS CSCD 北大核心 2010年第11期1883-1887,共5页 Journal of Functional Materials
基金 国家自然科学基金资助项目(50676113 50976127)
关键词 PH值 ADP 生长速度 AFM pH value ADP growth rate growth mechanism AFM
  • 相关文献

参考文献10

  • 1Murata Y, Sone S, Wada K. [J]. J Crystal Growth,1982, 58(1):243-252.
  • 2Chernov A A, Rashkovich L N. [J]. J Crystal Growth, 1987, 84(3):389-393.
  • 3Malkin A I, Chernov A A, Alexeev I V. [J]. J Crystal Growth, 1989, 97(3-4) :765-769.
  • 4Ristie R I, Sherwood J N. [J]. J Phys D: Appl Phys, 1991, 24:171-175.
  • 5Alexandru H V. [J]. J Crystal Growth, 1996, 169:347- 354.
  • 6Sangwal K.[J]. Prog Crystal Growth and Charact, 1998, 36(3) : 163-248.
  • 7Rajendran K V, Rajasekaran R, Jayaraman D, et al. [J]. Mater Chem Phys,2003, 81:50.
  • 8喻江涛,李明伟,王晓丁.ADP晶体相变界面微观形貌及其推移的实时AFM研究[J].工程热物理学报,2008,29(5):721-725. 被引量:4
  • 9Malkin A I, Chernov A A, Alexeev I V. [J]. J Crystal Growth, 1989,97 : 765.
  • 10喻江涛,李明伟,曹亚超,王晓丁,程旻.ADP晶体的生长丘、台阶微观形貌及台阶棱边能[J].功能材料,2009,40(2):335-337. 被引量:4

二级参考文献13

  • 1Xu Dongli Xue Dongfeng.Chemical Bond Calculations of Crystal Growth of KDP and ADP[J].Journal of Rare Earths,2006,24(z1):144-148. 被引量:2
  • 2王希敏,许实,张克从.ADP晶体快速生长及其相关性能研究[J].人工晶体学报,1994,23(1):33-38. 被引量:11
  • 3Barvinschi F, Nicoara I, Santailer J L, et al. Pseudo-Transient Heat Transfer in Vertical Bridgman Crystal Growth of Semi-Transparent Materials. Modelling Simul. Mater. Sci. Eng., 1998, 6:691-700.
  • 4Vizman D, Nicoara I, Nicoara D. On the Factors Affecting the Isotherm Shape During Bridgman Growth of Semi-Transparent Crystals. Journal of Crystal Growth, 1996, 169:161-169.
  • 5J A Painsner, J D Boyes, S A Kuopen, et al. National Ignition Facility. Laser Focus World, 1994, 30(5): 75.
  • 6Xu Dongli, Xue Dongfeng. Chemical Bond Analysis of the Crystal Growth of KDP and ADP. J. Crystal Growth, 2006, 286:108.
  • 7Herring C. Some Theorems on the Free Energies of Crystal Surfaces. Phys. Rev., 1951, 82:87-93.
  • 8Thomas T N, Land T A. AFM Investigation of Step Kinetics and Hillock Morphology of the 100 Face of KDP. Crystal Growth., 2004, 260:566-579.
  • 9Chernov A A. Step Bunching and Solution Flow. Journal of Optoelectronics and Advanced Materials, 2003, 5: 575-587.
  • 10Terry A Land, James J De Yoreo. The Evolution of Growth Modes and Activity of Growth Sources on Canavalin Investigated by in Situ Atomic Force Microscopy. J. Crystal Growth, 2000, 208:623-637.

共引文献5

同被引文献8

引证文献2

二级引证文献4

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部