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Rh-6G/DNA-CTMA薄膜的制备与光电特性表征

Preparations and photo-electricity characteristics of Rh-6G/DNA-CTMA composite film
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摘要 采用旋涂法和自组装成膜法制备了不同厚度的Rh-6G/DNA-CTMA复合薄膜。通过对Rh-6G/DNA-CTMA薄膜的表面形貌、Rh-6G/DNA-CTMA样品溶液及薄膜的紫外/可见吸收光谱和透过率的测量,以及对薄膜样品交流电阻的表征,研究了薄膜的光电特性与成膜质量。实验结果表明:制备的Rh-6G/DNA-CTMA溶液在533 nm处出现吸收峰,且随着掺杂Rh-6G浓度的增加吸收增强,在其他波段无明显吸收;制备的Rh-6G/DNA-CTMA掺杂薄膜在小于280 nm范围只有很小的透射,在540 nm处有明显吸收。此外,未掺杂薄膜的交流电阻随着频率的增加而减小,而掺杂薄膜的交流电阻的变化相反,并在频率为10 MHz和55 MHz处出现明显的突变。 Rhodamine-6G(Rh-6G) doped DNA-CTMA thin films were prepared by spin-coating and self-assembled methods.The optical-electrical properties and the quality of Rh-6G/DNA-CTMA solutions and Rh-6G/DNA-CTMA thin films were characterized by the measurement of alternating current(AC) resistor surface morphology,absorption spectra,and transmissivity in the UV/VIS,respectively.The experiment results show that there is no absorption in the absorption spectra of Rh-6G/DNA-CTMA solution except a strong absorption peak at 533 nm,and the peak intensity increased with the rising of doped concentration of Rh-6G.And yet the Rh-6G/DNA-CTMA polymer thin film has an absorption peak at wavelength 540 nm and a small transmission of the wavelength less than 280 nm.In addition,the AC resistor of the thin film without doping Rh-6G is decreased with the applied frequency increasing.On the contrary,the variation of the AC resistor of the thin film with doped Rh-6G was different,especially there are sudden changes at the frequencies of 10 MHz and 55 MHz.
出处 《红外与激光工程》 EI CSCD 北大核心 2010年第5期862-866,共5页 Infrared and Laser Engineering
基金 浙江省钱江人才计划项目(2007R10015) 宁波市重点实验室开放基金资助项目(2007A22006)
关键词 罗丹明6G DNA-CTMA 吸收光谱 交流电阻 Rhodamine-6G DNA-CTMA Absorption spectrum AC resistor
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参考文献8

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