摘要
GaN-based thin film vertical structure light-emitting diodes （VS-LEDs） were fabricated by a modified YAG laser lift-off （LLO） process and transferred to Cu substrates. With a comparison of the electrical and optical properties of conventional LEDs on sapphire substrates and of lateral structure thin film LEDs by a KrF LLO process, the vertical structure of LLO LEDs shows obvious superiority. LLO VSLEDs made by modified YAG LLO process show less increase of leakage current than the devices made by conventional/（rE LLO process. Furthermore, owing to the well current spreading and less current path, the ideality factors and series resistance of vertical structure LEDs reduce greatly and the efficiency increases more obviously than the lateral structure LEDs, which is dso reflected on the relative L - I curves. The output power of vertical structure LEDs is over 3 times greater than that of the lateral structure LLO LEDs within 300mA.
GaN-based thin film vertical structure light-emitting diodes （VS-LEDs） were fabricated by a modified YAG laser lift-off （LLO） process and transferred to Cu substrates. With a comparison of the electrical and optical properties of conventional LEDs on sapphire substrates and of lateral structure thin film LEDs by a KrF LLO process, the vertical structure of LLO LEDs shows obvious superiority. LLO VSLEDs made by modified YAG LLO process show less increase of leakage current than the devices made by conventional/（rE LLO process. Furthermore, owing to the well current spreading and less current path, the ideality factors and series resistance of vertical structure LEDs reduce greatly and the efficiency increases more obviously than the lateral structure LEDs, which is dso reflected on the relative L - I curves. The output power of vertical structure LEDs is over 3 times greater than that of the lateral structure LLO LEDs within 300mA.
基金
Supported by the National Natural Science Foundation of China under Grant Nos 61006035, 61076012, 60676032 and 60607003, the National Key Basic Research Program of China under Grant No TG-2007CB307004, the National High-Tech Research and Development Program of China under Grant No 2009AA03A198, and the Postdoctoral Science Foundation of China under Grant No 20090460168
