摘要
Al0.85In0.15N//AlN/GaN metal-oxide-semiconductor high electron mobility transistors （MOS-HEMTs） employing a 3-nm ultra-thin atomic-layer deposited （ALD） Al2O3 gate dielectric layer are reported. Devices with 0.6μm gate lengths exhibit an improved maximum drain current density of 1227mA/mm at a gate bias of 3 V, a peak transeonductance of 328mS/mm, a cutoff frequency fr of 16 GHz, a maximum frequency of oscillation fmax of 45 GHz, as well as significant gate leakage suppression in both reverse and forward directions, compared with the conventionM Al0.85In0.15N/AlN/GaN HEMT. Negligible C - V hysteresis, together with a smaller pinch-off voltage shift, is observed, demonstrating few bulk traps in the dielectric and high quality of the Al2O3/AIInN interface, it is most notable that not only the transconductance profile of the MOS-HEMT is almost the same as that of the conventional HEMT with a negative shift, but also the peak transconduetance of the MOS-HEMT is increased slightly. It is an exeitin~ inwrovement in the transconductance performance.
Al0.85In0.15N//AlN/GaN metal-oxide-semiconductor high electron mobility transistors （MOS-HEMTs） employing a 3-nm ultra-thin atomic-layer deposited （ALD） Al2O3 gate dielectric layer are reported. Devices with 0.6μm gate lengths exhibit an improved maximum drain current density of 1227mA/mm at a gate bias of 3 V, a peak transeonductance of 328mS/mm, a cutoff frequency fr of 16 GHz, a maximum frequency of oscillation fmax of 45 GHz, as well as significant gate leakage suppression in both reverse and forward directions, compared with the conventionM Al0.85In0.15N/AlN/GaN HEMT. Negligible C - V hysteresis, together with a smaller pinch-off voltage shift, is observed, demonstrating few bulk traps in the dielectric and high quality of the Al2O3/AIInN interface, it is most notable that not only the transconductance profile of the MOS-HEMT is almost the same as that of the conventional HEMT with a negative shift, but also the peak transconduetance of the MOS-HEMT is increased slightly. It is an exeitin~ inwrovement in the transconductance performance.
基金
Supported by the Dandamental Research Funds for the Central Universities under Grant No JY10000925002, the National Key Science and Technology Special Project under Grant No 2008ZX01002-002, and the National Natural Science Foundation of China under Grant Nos 60736033, 60976068 and 61076097.
