摘要
针对ICP刻蚀工艺进行了深入研究,探讨了气体流量、射频功率和工作室气压设定值等工艺参数对刻蚀效果的影响,最终在硅基底上获得了线宽为40μm时深刻蚀的最佳工艺参数,即采用BOSCH工艺,压力设定为6Pa,在刻蚀过程中通入流量为100cm3/min的SF6气体,持续11s,射频功率20W,源功率450W,保护过程中通入流量为75cm3/min的C4F8气体,持续10s,射频功率0W,源功率220W,得到了最佳刻蚀结果,并利用此工艺制作出了量程为±12g,灵敏度为79mV/g,精度高于±2%微机械加速度传感器。
The ICP etching technology was further studied. The effects of the gas flow rate, RF power and etching chamber pressure on the etching result were discussed. Finally, the optimum parameters of the ICP etching with 40 μm wide lines on the silicon substrate were gotten. Using the BOSCH technolo- gy with the pressure of 6 Pa, the SF6 flow rate is 100 cm^3/min for 11 s with the RF power of 20 W and the source power of 450 W during the etching, and the C4F8 flow rate is 75 cm^3/min for 10 s with the RF power of 0 W and the source power of 220 W during the protecting. The best etching result was gotten, and a MEMS aeeelerometer with the range of ＋ 12 g, the sensitivity of 79 mV/g and the accuracy higher than ＋ 2 % was fabricated by this technology.
出处
《微纳电子技术》
CAS
北大核心
2010年第11期713-717,共5页
Micronanoelectronic Technology
基金
吉林省科技发展计划项目(20090105)
