摘要
为了研究在飞秒激光作用下半导体纳米颗粒的超快动力学过程,建立了一个带表面态的三能级结构的载流子弛豫简化模型,得出各能级的电子速率方程.利用数值模拟方法模拟出各能级电子密度和差分吸收率随时间的变化情况,得知由于吸收截面的变化,差分吸收谱会有一个超快的变化过程.并将模拟结果与FanxinWu等人的实验结果相比较,其曲线特征基本一致.说明该模型有一定的合理性.
To study the dynamic process excited by femtsecond laser,a carrier model with three energy level and trap is constructed,with which the electron rate equation is obtained.The numerical simulation is used to calculate the electron number change of each energy level and the differentiated absorbtion rate as the time goes by.With the change of the electron＇s absorption cross-section,differentiated absorbtion rate will have a ultrafast change process.Compared with the experimental result of Fanxin Wu,the differentiated absorbtion rate curves are basically the same,which shows the model have some rationality.
出处
《光子学报》
EI
CAS
CSCD
北大核心
2010年第10期1738-1741,共4页
Acta Photonica Sinica
基金
国家重点基础研究发展计划(2007CB307002)资助
关键词
半导体纳米颗粒
载流子弛豫
速率方程
数值模拟
Semiconductor nanoparticle
Carrier relaxation
Rate equation
Numerical simulation
