晶界电性能对ZnO压敏陶瓷性能的影响

Influence of Sintering Conditions on the Microstructure and Electrical Properties in ZnO Varistor

研究了传统烧结与热压烧结对ZnO压敏陶瓷显微结构和电性能的影响。采用扫描电镜观察(SEM)、电流-电压测试(I-V)、电容-偏压测试(C-V)以及阻抗谱等分析方法或测试手段研究了陶瓷的显微结构、电性能。结果表明,热压烧结增大了ZnO压敏陶瓷的烧结密度,提高了电性能。晶界特性参数测试结果表明,热压烧结还可以增强晶界特性。

ZnO varistor samples are prepared by conventional sintering method and hot-pressing sintering method, respectively. The influence of sintering conditions on the mierostructure and electrical properties are investigated using scanning electron microscopy（SEM）,current-voltage test（I-V）, capacity-voltage test（C-V） and impedance anal- ysis. Results show that, samples obtained by hot-pressing method show higher bulk density and smaller grain size, and the electrical properties are improved. The grain boundary characteristic results indicates that hot-pressing method can improve the grain boundary effects.