深亚微米低压CMOS IC的ESD保护方法

ESD Protection Methods for Deep Submicron Low Voltage CMOS IC

详述了目前用于深亚微米ＣＭＯＳＩＣ的静电放电（ＥＳＤ）保护方法，比较了它们各自的特点，并详细阐述了栅耦合ＰＭＯＳ触发／ＮＭＯＳ触发横向可控硅（ＰＴＬＳＣＲ／ＮＴＬＳＣＲ）ＥＳＤ保护电路的工作原理。

Several electrostatic discharge protection methods used in deep submic ron CMOS IC have been discussed.Their own features are compared.And the operating principle of a gate coupled PMOS triggered/NMOS triggered lateral silicon rectifier ESD circuit is described in details.