摘要
根据半导体理论分析了ＣＯ２激光器锗窗的吸收。控制施主浓度和掺杂等电子杂质，可以获得低吸收锗窗。
Absorption of Germanium window for CO 2 Laser anal yzed by means of semiconductor theory. Germanium window with low absorption will be obtained through controlling donor concentration and doping isoelectronic im purity.
出处
《激光与红外》
CAS
CSCD
北大核心
1999年第3期187-188,共2页
Laser & Infrared
关键词
CO2激光器
锗窗
吸收系数
电子杂质
CO 2 laser, germanium window, absorption coefficient , donor concentration, isoelectronic impurity.
