双靶磁控溅射制备掺W氧化钒薄膜的研究

STUDY ON W-DOPED VANADIUM OXIDE THIN FILMS PREPARED BY DOUBLE TARGETS MAGNETRON SPUTTERING

用双靶磁控溅射制备了掺钨氧化钒薄膜。Ｘ射线电子谱（ＸＰＳ）对所沉积的薄膜进行了分析，发现掺Ｗ氧化钒薄膜的相结构比较复杂。通过特征峰标定了这些相。用面积灵敏度因子方法得到Ｗ掺杂量的结果。原子力显微镜给出了薄膜的表面形貌。其表面形貌特征随沉积条件的不同有一定的变化。

In this paper, W-doped vanadium oxide thin films were prepared by radio frequency/directcurrent double targets magnetron sputtering methods. XPS(X-ray photoelectron spectroscopy) was used toanalyze the deposited thin films. It is found that the phases of the W-doped vanadium oxide thin films arecomplex. The phases were characterized via the characteristic peaks, and the doping quantity Of tungstenelement is obtained by applying the area sensitivity factors. AFM (atomic force microscopy) shows the surfacetexture of the deposited thin films, which vary with the deposited condition.