摘要
报导了采用PECVD方法制备SnO_2敏感薄膜材料,并用浸渍法对薄膜修饰了金属氧化物CuO。实验发现该薄膜材料对H_2S气体具有很高的灵敏度和选择性,并且具有较快的响应、恢复速度。
SnO_2 sensing thin films are prepared by means of plasma enhanced chemical vapour deposition method,and the films are modified with CuO by means of soaked technique. The sensing films are proved to be highly sensitive and elective to H_2S gas. Furthermore, the response speed is fairly quick.
出处
《材料导报》
EI
CAS
CSCD
北大核心
1999年第3期66-68,共3页
Materials Reports
基金
国家自然科学基金资助(69776038)
关键词
气敏材料
薄膜
表面改性
硫化氢
H_2S-sensing material
thin film
surface modification
