摘要
利用热重量分析法(简称TGA法)、X射线衍射(X-Ray diffraction)和扫描电镜观察(SEM)分析了SiC在MoSi_2低温氧化中的作用。结果表明SiC的加入促进了MoSi_2的氧化,但未发现“PEST”现象。
In this paper the effects of SiC on low-temperature oxidation of MoSi_2 have been analyzed by TGA,X-ray diffraction and SEM. It was found that the degree of oxidation of MoSi_2 was increased by adding SiC, but'PEST' didn't been found.
出处
《材料导报》
EI
CAS
CSCD
北大核心
1999年第3期72-73,共2页
Materials Reports
基金
煤炭部青年基金
